发明名称 |
Method of fabricating semiconductor device and the semiconductor device |
摘要 |
A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, and a plurality of first buried wirings and a plurality of second buried wirings located in the insulating film at predetermined intervals alternately in a direction parallel to a surface of the semiconductor substrate. Each second buried wiring is formed so that a width between both side surfaces thereof is increased from a lower end toward an upper portion and at an upper surface the width is larger than a width at an upper surface of each first buried wiring.
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申请公布号 |
US8592978(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20100729804 |
申请日期 |
2010.03.23 |
申请人 |
MATSUNO KOICHI;HIMENO YOSHIAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUNO KOICHI;HIMENO YOSHIAKI |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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