发明名称 |
Nitride semiconductor device and method of manufacturing nitride semiconductor device |
摘要 |
A nitride semiconductor device in which contact resistance between an ohmic electrode and an ohmic recess portion is reduced and a method of manufacturing the nitride semiconductor device are provided. The nitride semiconductor device includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than a bandgap of the first nitride semiconductor layer; an ohmic recess portion formed in at least the second nitride semiconductor layer; and an ohmic electrode provided in contact with the ohmic recess portion. The ohmic recess portion includes a corrugated structure in at least a part of a plane in contact with the ohmic electrode.
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申请公布号 |
US8592871(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213494321 |
申请日期 |
2012.06.12 |
申请人 |
KAJITANI RYO;PANASONIC CORPORATION |
发明人 |
KAJITANI RYO |
分类号 |
H01L29/737 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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