发明名称 |
Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure |
摘要 |
Gate cross diffusion in a semiconductor structure is substantially reduced or eliminated by forming multiple n-type gate regions with different dopant concentrations and multiple p-type gate regions with different dopant concentrations so that the n-type gate region with the lowest dopant concentration touches the p-type gate region with the lowest dopant concentration.
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申请公布号 |
US8592902(B1) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213624018 |
申请日期 |
2012.09.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENT INCORPORATED |
发明人 |
MEHROTRA MANOJ |
分类号 |
H01L21/336;H01L21/76;H01L21/8234;H01L29/66 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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