发明名称 |
Method of forming a power semiconductor device and power semiconductor device |
摘要 |
A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer into the epitaxial layer, wherein a junction between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region. In operation of the semiconductor device, the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.
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申请公布号 |
US8592894(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20080999143 |
申请日期 |
2008.06.30 |
申请人 |
REYNES JEAN MICHEL;STAFANOV EVGUENIY;WEBER YANN;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
REYNES JEAN MICHEL;STAFANOV EVGUENIY;WEBER YANN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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