| 摘要 |
A light emitting device (LED) employs one or more conductive multilayer reflector (CMR) structures. Each CMR is located between the light emitting region and a metal electrical contact region, thereby acting as low-loss, high-reflectivity region that masks the lossy metal contact regions away from the trapped waveguide modes. Improved optical light extraction via an upper surface is thereby achieved and a vertical conduction path is provided for current spreading in the device. In an example vertical, flip-chip type device, a CMR is employed between the metal bottom contact and the p-GaN flip chip layer. A complete light emitting module comprises the LED and encapsulant layers with a phosphor. Also provided is a method of manufacture of the LED and the module.
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