发明名称 |
Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer |
摘要 |
A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes responsive to an external magnetic field, and a spacer layer positioned between the first and second magnetic layers. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes copper and metal intermediate layers and a main spacer layer composed primarily of gallium oxide. The copper and metal intermediate layers are positioned between the main spacer and first magnetic layers. The metal intermediate layer is positioned between the copper and main spacer layers. The metal intermediate layer is composed primarily of at least one from a group of one of magnesium and at least partially oxidized magnesium, and one of aluminum and at least partially oxidized aluminum.
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申请公布号 |
US8593766(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201113031822 |
申请日期 |
2011.02.22 |
申请人 |
TSUCHIYA YOSHIHIRO;CHOU TSUTOMU;MATSUZAWA HIRONOBU;KOIKE HAYATO;TDK CORPORATION |
发明人 |
TSUCHIYA YOSHIHIRO;CHOU TSUTOMU;MATSUZAWA HIRONOBU;KOIKE HAYATO |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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