发明名称 Semiconductor device test method and apparatus, and semiconductor device
摘要 A method of testing a semiconductor device includes a conductive foreign matter test step of measuring the resistance value between the first and second conductive patterns to determine whether conductive foreign matter is present between the first and second conductive patterns, a first open circuit test step of measuring the resistance value between two points on the first conductive pattern to determine whether there is an open circuit in the first conductive pattern, and a second open circuit test step of measuring the resistance value between two points on the second conductive pattern to determine whether there is an open circuit in the second conductive pattern. The measurement of the resistance value in each of the test steps is accomplished by pressing probes vertically against the first conductive pattern or the second conductive pattern or both.
申请公布号 US8593167(B2) 申请公布日期 2013.11.26
申请号 US201113042600 申请日期 2011.03.08
申请人 NARAZAKI ATSUSHI;MITSUBISHI ELECTRIC CORPORATION 发明人 NARAZAKI ATSUSHI
分类号 G01R31/02;G01R31/26 主分类号 G01R31/02
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