HALF-TONE PHASE SHIFT MASK BLANK AND METHOD FOR MANUFACTURING HALF-TONE PHASE SHIFT MASK

摘要

The present invention is to provide a new technology that improves the dry etching speed of a light shield layer and obtains various properties such as optical and chemical properties required for the light shield layer including a chrome-based material. A half tone phase shift mask (2) and the light shield layer (3) are deposited on a transparent substrate (1). The light shield layer (3) has a single layer or a multi-layer structure and at least one layer is made of the chrome-based material including Sn. The half tone phase shift mask (2) includes molybdenum silicon nitride oxide. A layer including the chrome-based material including Sn improves dry etching speed in a fluorine-based dry etching process including oxygen without a decrease in a light shielding effect. When a pattern is transferred to the light shield layer, the load to a resist pattern or a hard mask pattern is reduced to perform pattern transfer with high accuracy.