发明名称 Driving method of semiconductor device
摘要 A driving method by which stored data can be retained even with no power supply and the number of writing operations is not limited is provided. The variation of a writing potential to a memory element is suppressed to improve the reliability according to a new driving method. According to the driving method of a semiconductor device, in writing data, the writing potential is increased step-by-step while verifying the reading current, and the result of the reading current is used for the writing current. That is, data writing is performed while verifying whether data writing is performed with an accurate potential. Accordingly, data writing can be performed with high reliability.
申请公布号 US8593858(B2) 申请公布日期 2013.11.26
申请号 US201113218899 申请日期 2011.08.26
申请人 KAMATA KOICHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KAMATA KOICHIRO
分类号 G11C11/24 主分类号 G11C11/24
代理机构 代理人
主权项
地址