| 摘要 |
Provided is a method for manufacturing a semiconductor light-emitting element having a narrow wavelength distribution and comprising a substrate and a group III compound semiconductor layer formed thereon, the substrate being made of a material different from the compound semiconductor constituting the semiconductor layer. The method for manufacturing a semiconductor light-emitting element having a group III compound semiconductor layer is characterized by comprising a semiconductor layer-forming step wherein a group III compound semiconductor layer having a total thickness of not less than 8 mum is formed on a substrate (11) having a diameter D, a thickness and an amount of warpage H within the range of ±30 mum. The method is also characterized in that the diameter D and the thickness d of the substrate (11) satisfy the following formula (1): 0.7×102@(D/d)@1.5×102(1).
|
