发明名称 |
Forming inter-device STI regions and intra-device STI regions using different dielectric materials |
摘要 |
An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value.
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申请公布号 |
US8592918(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20100843658 |
申请日期 |
2010.07.26 |
申请人 |
YUAN FENG;LEE TSUNG-LIN;CHEN HUNG-MING;CHANG CHANG-YUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YUAN FENG;LEE TSUNG-LIN;CHEN HUNG-MING;CHANG CHANG-YUN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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