发明名称 |
Bipolar semiconductor device and manufacturing method |
摘要 |
A bipolar semiconductor device and manufacturing method. One embodiment provides a diode structure including a structured emitter coupled to a first metallization is provided. The structured emitter includes a first weakly doped semiconductor region of a first conductivity type which forms a pn-load junction with a weakly doped second semiconductor region of the diode structure. The structured emitter includes at least a highly doped first semiconductor island of the first conductivity type which at least partially surrounds a highly doped second semiconductor island of the second conductivity type.
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申请公布号 |
US8592903(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20080324374 |
申请日期 |
2008.11.26 |
申请人 |
SCHULZE HANS-JOACHIM;PFIRSCH FRANK;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHULZE HANS-JOACHIM;PFIRSCH FRANK |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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