发明名称 |
Field effect transistor with source, heavy body region and shielded gate |
摘要 |
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.
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申请公布号 |
US8592895(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213633038 |
申请日期 |
2012.10.01 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YILMAZ HAMZA;CALAFUT DANIEL;SAPP STEVEN;KRAFT NATHAN;CHALLA ASHOK |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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