REACTOR FOR VAPOR PHASE DEPOSITION AND METHOD OF FORMING ORGANIC FILM

摘要

The present invention relates to a vapor phase deposition reactor and a method for manufacturing an organic film. The vapor phase deposition reactor according to one embodiment of the present invention includes: a gas supply unit having a plurality of dispersion apertures to supply organic vapor precursor; and a susceptor in which a substrate is placed. The vapor phase deposition reactor provides more than two adjacent controlled temperature zones on a delivery path of the organic vapor precursor from the gas supply unit to the substrate. When a first controlled temperature zone in the side of the gas supply unit among the more than two adjacent controlled temperature zones has temperature variation rate (M1), the first controlled temperature zone has negative temperature variation rate whose absolute value is smaller than temperature variation rate (M2) of a second controlled temperature zone in the side of the susceptor. [Reference numerals] (AA) Source precursor gas in