发明名称 Field effect transistor for sensing deformation
摘要 An apparatus including a first layer configured to enable a flow of charge carriers from a source electrode to a drain electrode, a second layer configured to control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and a third layer positioned between the first and second layers to shield the first layer from the electric field, wherein the third layer includes a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer.
申请公布号 US8592888(B2) 申请公布日期 2013.11.26
申请号 US201113205974 申请日期 2011.08.09
申请人 KIVIOJA JANI;WHITE RICHARD;NOKIA CORPORATION 发明人 KIVIOJA JANI;WHITE RICHARD
分类号 H01L29/12 主分类号 H01L29/12
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