| 摘要 |
A light emitting device according to the present invention, to improve heat radiation effects, comprises a substrate including gallium arsenide (GaAs)-based materials; a light emitting structure layer arranged on the substrate and including a first semiconductor layer, an active layer made of two or more materials among GaAsInP-based, AlGaInP-based, or AlInP-based, and a second semiconductor layer; and a hole completely passing through the light emitting structure layer or a hole partially passing through the first semiconductor layer, the active layer, and the second semiconductor layer. |
