发明名称 Semiconductor device including capacitor
摘要 A substrate is provided with a first wiring layer 111, an interlayer insulating film 132 on the first wiring layer 111, a hole 112A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112A, a second metal layer 113 formed in the hole 112A, a dielectric insulating film 135 on the first metal layer 112, and second wiring layers 114-116 on the dielectric insulating film 135, wherein the first metal layer 112 constitutes at least part of the lower electrode, an area, facing the lower electrode, of the second wiring layers 114-116 constitutes the upper electrode, and a capacitor 160 is constructed of the lower electrode, the dielectric insulating film 135 and the upper electrode P1.
申请公布号 US8592884(B2) 申请公布日期 2013.11.26
申请号 US201213426014 申请日期 2012.03.21
申请人 WATANABE KENICHI;FUJITSU SEMICONDUCTOR LIMITED 发明人 WATANABE KENICHI
分类号 H01L27/108 主分类号 H01L27/108
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