发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device having a memory cell in which operating potentials are few and the scale of the peripheral circuitry is reduced includes a select transistor having a source/drain on both sides of a channel of a semiconductor substrate and having a gate electrode disposed on the channel via a thick gate insulating film; an element isolation region formed on the semiconductor substrate in an area adjacent to the select transistor; an antifuse adjacent to the element isolation region, having a lower electrode formed on the semiconductor substrate and having an upper electrode disposed on the semiconductor substrate in an area between the element isolation region and lower electrode via a thin gate insulating film; and a connection contact electrically connecting the source and upper electrode and contacting the source and the upper electrode.
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申请公布号 |
US8592942(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20090320102 |
申请日期 |
2009.01.16 |
申请人 |
KODAMA NORIAKI;HIDAKA KENICHI;KOBATAKE HIROYUKI;ONUMA TAKUJI;RENESAS ELECTRONICS CORPORATION |
发明人 |
KODAMA NORIAKI;HIDAKA KENICHI;KOBATAKE HIROYUKI;ONUMA TAKUJI |
分类号 |
H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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