<p>A method for manufacturing a semiconductor device is provided. The method for manufacturing the semiconductor device includes preparing a semiconductor substrate having separated active parts; forming a lower layer and a first hard mask layer on the semiconductor substrate having the active parts; forming line-shaped buffer mask patterns intersecting the active parts on the first hard mask layer; forming a second hard mask pattern having aperture parts for exposing the upper parts of the active parts and interesting the buffer mask patterns; using an etching mask as the second hard mask pattern and the buffer mask patterns and forming openings by etching the first hard mask layer; and using the first hard mask layer having the openings and etching the lower layer to form contact holes for partly exposing the active parts.</p>
