发明名称 |
Wide bandgap HEMTS with source connected field plates |
摘要 |
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
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申请公布号 |
US8592867(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201113072449 |
申请日期 |
2011.03.25 |
申请人 |
WU YIFENG;PARIKH PRIMIT;MISHRA UMESH;MOORE MARCIA;CREE, INC. |
发明人 |
WU YIFENG;PARIKH PRIMIT;MISHRA UMESH;MOORE MARCIA |
分类号 |
H01L29/66;H01L29/02;H01L29/06;H01L29/20;H01L29/40;H01L29/778 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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