发明名称 |
Compound semiconductor device and method for manufacturing the same |
摘要 |
A compound semiconductor device includes: a substrate; a GaN compound semiconductor multilayer structure disposed over the substrate; and a stress relief layer which is AlN-based and which is disposed between the substrate and the GaN compound semiconductor multilayer structure, wherein a surface of the stress relief layer that is in contact with the GaN compound semiconductor multilayer structure includes recesses that have a depth of 5 nm or more and that are formed at a number density of 2×1010 cm-2 or more.
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申请公布号 |
US8592823(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213548324 |
申请日期 |
2012.07.13 |
申请人 |
KOTANI JUNJI;ISHIGURO TETSURO;TOMABECHI SHUICHI;FUJITSU LIMITED |
发明人 |
KOTANI JUNJI;ISHIGURO TETSURO;TOMABECHI SHUICHI |
分类号 |
H01L29/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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