发明名称 |
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon |
摘要 |
A method is provided for producing a single crystal body of a group III nitride, comprising the steps of forming a molten flux of a volatile metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenishing a compound containing N from a source outside the reaction vessel, and wherein a seed crystal is disposed in the reaction vessel.
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申请公布号 |
US8591647(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US20090367013 |
申请日期 |
2009.02.06 |
申请人 |
SARAYAMA SEIJI;SHIMADA MASAHIKO;YAMANE HISANORI;IWATA HIROKAZU;RICOH COMPANY, LTD. |
发明人 |
SARAYAMA SEIJI;SHIMADA MASAHIKO;YAMANE HISANORI;IWATA HIROKAZU |
分类号 |
H01L21/322;C30B9/00;C30B11/00;C30B15/00 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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