发明名称 Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures
摘要 A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.
申请公布号 US8592311(B2) 申请公布日期 2013.11.26
申请号 US201213615308 申请日期 2012.09.13
申请人 LIN YAOJIAN;CAO HAIJING;ZHANG QING;CHEN KANG;FANG JIANMIN;STATS CHIPPAC, LTD. 发明人 LIN YAOJIAN;CAO HAIJING;ZHANG QING;CHEN KANG;FANG JIANMIN
分类号 H01L21/44 主分类号 H01L21/44
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