发明名称 |
Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures |
摘要 |
A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.
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申请公布号 |
US8592311(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213615308 |
申请日期 |
2012.09.13 |
申请人 |
LIN YAOJIAN;CAO HAIJING;ZHANG QING;CHEN KANG;FANG JIANMIN;STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN;CAO HAIJING;ZHANG QING;CHEN KANG;FANG JIANMIN |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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