发明名称 |
Modulated deposition process for stress control in thick TiN films |
摘要 |
A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
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申请公布号 |
US8592307(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213592810 |
申请日期 |
2012.08.23 |
申请人 |
HERDT GREGORY CHARLES;BUCKFELLER JOSEPH W.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HERDT GREGORY CHARLES;BUCKFELLER JOSEPH W. |
分类号 |
H01L21/285 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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