发明名称 METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION
摘要 <p>A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth. An ALD deposition system that can be used in the present invention includes solution vessel (10), for holding the dissolved precursor solution (precursor A), a liquid pump (20), to pump precursor A to a vaporizer (30), a vessel (40), for holding precursor B, such as water, a deposition chamber (50), having a monitoring device (60), therein, and an exhaust system (70).</p>
申请公布号 KR101332877(B1) 申请公布日期 2013.11.25
申请号 KR20060039001 申请日期 2006.04.28
申请人 发明人
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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