| 摘要 |
This invention provides a laser processing method of a wafer for suppressing the exposure of a wafer melt called debris from a surface of the wafer. The laser processing method includes a first processing groove forming step of forming a first laser processing groove by emitting a laser beam along a division-expected line so that an redundancy rate of a light collection spot is less than 95%. The method also includes a second processing groove forming step of forming a second laser processing groove on a bottom part of the first laser processing groove by emitting a laser beam along the first laser processing groove so that the redundancy rate of the light collection spot is more than 97%. |
