| 摘要 |
PURPOSE: A nonvolatile organic memory device and a manufacturing method thereof are provided to implement a high data retention property, high reproducibility, and a high stability by forming organic and inorganic complex layers with a bistable property using a quantum dot and polymer including a I-III-VI group compound semiconductor. CONSTITUTION: A first electrode(210) is located on a substrate(200). An organic and inorganic complex layer(220) is formed on the first electrode. The organic and inorganic complex layer is composed of a polymer layer(224) including a quantum dot(222) with a I-III-VI group compound semiconductor. A second electrode(230) is located on the organic and inorganic complex layer. The first electrode and the second electrode transmit currents to the organic and inorganic complex layer by a voltage applied from the outside. |
