发明名称 NOUVEAU MATERIAU D'ENDUCTION ANTI-REFLECHISSANT SUPERIEUR POUR LA REDUCTION DE FILIGRANE D'EAU EN PHOTOLITHOGRAPHIE PAR IMMERSION.
摘要 <p>A coating material disposed over a photosensitive layer comprises an acid capable of neutralizing a base quencher from the photosensitive layer; and a polymer that is a carrier of the acid and is insoluble to an immersion fluid used in an immersion lithography process. The acid is chemically bonded to the polymer or mixed to the polymer. The acid is an organic acid comprising a sulfonyl acid group. The polymer comprises fluoride. The coating material is soluble in tetramethylammonium hydroxide (TMAH) solution or cyclohexanol. An independent claim is included for a method for immersion lithography.</p>
申请公布号 FR2891631(B1) 申请公布日期 2013.11.22
申请号 FR20060008608 申请日期 2006.10.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO.,LTD. 发明人 CHANG CHING YU
分类号 G03F7/11;G02B1/11;G03F7/20 主分类号 G03F7/11
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