发明名称 |
PHOTOMASK BLANK, PROCESS FOR PRODUCTION OF PHOTOMASK, AND CHROMIUM-CONTAINING MATERIAL FILM |
摘要 |
In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400°C or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision. |
申请公布号 |
KR20130127474(A) |
申请公布日期 |
2013.11.22 |
申请号 |
KR20137016115 |
申请日期 |
2011.11.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
YOSHIKAWA HIROKI;FUKAYA SOUICHI;INAZUKI YUKIO;YAMAMOTO TSUNEO;NAKAGAWA HIDEO |
分类号 |
G03F1/50;C22C27/06;C22C28/00;C23C14/14;H05K3/10 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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