OXIDE SEMICONDUCTOR AND METHOD OF FORMING THE SAME
摘要
<p>A transistor having a multi-active layer is provided. The multi-active layer works as the channel of the transistor. The transistor comprises a first channel layer and a second channel layer. The first channel layer works as a main channel. The second channel layer protects the first channel layer and forms source/drain electrodes and resistance contact.</p>
申请公布号
KR20130127150(A)
申请公布日期
2013.11.22
申请号
KR20120050864
申请日期
2012.05.14
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
KIM, HYUN JAE;KIM, CHUL HO;KIM, DEUK JONG;JEONG, WOONG HEE;KIM, DONG LIM;RIM, YOU SEUNG