RESISTIVE NON-VOLATILE MEMORY DEVICE USING RESISTANCE MATERIAL AND METHOD OF MANUFACTURING THE SAME

摘要

For a resistive non-volatile memory device and a manufacturing method thereof, a device separation film protruding from a substrate and a cell switch having the same surface as a top surface of the device separation film and arranged in a cell area are provided. An arrangement error between the cell switch and an activation area is prevented to improve an current property of the switch and reduce a process step of forming the switch.