| 摘要 |
A film forming apparatus is provided to prevent a reaction sub-particle from being attached to a semiconductor substrate or an inner surface of a chamber by guiding the reaction sub-particle through a ventilating hole. A substrate is introduced into a chamber(110). An inlet hole and a ventilating hole are formed on upper and lower portions of the chamber, respectively. A process gas is introduced and drained through the inlet and ventilating holes, respectively. A partition member(130) is arranged in an inner space of the chamber and divides the inner space into a process chamber and a non-process chamber. A support portion(120) is arranged in the process chamber and supports the substrate. A process gas supply unit(140) is arranged on the support portion and supplies a process gas into the process chamber. An insulation member(150) surrounds the process gas supply unit and is coupled with the partition member, such that the process chamber is separated from the non-process chamber. |
