| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-cost ion implantation method capable of efficiently implanting boron into a workpiece in a short time.SOLUTION: The ion implantation method includes: an ion implantation step of introducing a borane represented by BxHy (wherein x=10 to 36 and y=14 to 44) into a plasma generating chamber 1a to generate plasma P, and accelerating boron-containing ions ionized in the plasma to implant the boron-containing ions into a workpiece W existing in a vacuum processing chamber 1b communicating with the plasma generating chamber; and an annealing step of heating the workpiece at a predetermined temperature. |
