发明名称 METHOD FOR MAKING SILICA CRUCIBLE WITH PURE AND BUBBLE-FREE INNER CRUCIBLE LAYER
摘要 PROBLEM TO BE SOLVED: To prepare a silica crucible having an inner crucible layer in which the concentration of impurities is minimum and bubbles and bubble growth are reduced at a reasonable cost.SOLUTION: A method for making a silica glass crucible includes forming a first silica grain layer in a mold cavity, forming a second silica grain layer on the first silica grain layer, fusing at least a portion of the second silica grain layer at a first temperature, fusing at least a portion of the first silica grain layer at a second temperature higher than the first temperature, sublimating at least a portion of the first silica grain layer, fusing at least a portion of the second silica grain layer without substantially sucking a gas through the grains, and sucking the gas into pores distributing in the inner wall of the mold cavity through the grains, while fusing the first silica grain layer.
申请公布号 JP2013234119(A) 申请公布日期 2013.11.21
申请号 JP20130151660 申请日期 2013.07.22
申请人 SHINETSU QUARTZ PROD CO LTD 发明人
分类号 C03B20/00;C30B15/10;C30B29/06 主分类号 C03B20/00
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