发明名称 |
Methods for Forming a Semiconductor Device Using Masks with Non-Metallic Portions |
摘要 |
A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern.
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申请公布号 |
US2013309853(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313789244 |
申请日期 |
2013.03.07 |
申请人 |
SUNG SUGHYUN;KIM MYEONGCHEOL;JUNG MYUNG-HOON |
发明人 |
SUNG SUGHYUN;KIM MYEONGCHEOL;JUNG MYUNG-HOON |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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