| 发明名称 |
p-TYPE SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide semiconductor material having p-type conductivity, and to provide a semiconductor device using the oxide semiconductor material.SOLUTION: An oxide semiconductor material having p-type conductivity can be formed using a molybdenum oxide material containing molybdenum oxide (MoO(2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO) as its main component and MoO(2<y<3) at 4% or more. |
| 申请公布号 |
JP2013234106(A) |
申请公布日期 |
2013.11.21 |
| 申请号 |
JP20130025334 |
申请日期 |
2013.02.13 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ASAMI YOSHINOBU;KATAISHI RIHO;KIKUCHI ERUMU |
| 分类号 |
C01G39/02;H01L29/861;H01L29/868;H01L31/04 |
主分类号 |
C01G39/02 |
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