发明名称 Image Sensor Structure to Reduce Cross-Talk and Improve Quantum Efficiency
摘要 A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
申请公布号 US2013307104(A1) 申请公布日期 2013.11.21
申请号 US201213476785 申请日期 2012.05.21
申请人 TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;HUNG FENG-CHI;LIN JENG-SHYAN;WANG WEN-DE;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;HUNG FENG-CHI;LIN JENG-SHYAN;WANG WEN-DE
分类号 H01L31/0232 主分类号 H01L31/0232
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