发明名称 |
Image Sensor Structure to Reduce Cross-Talk and Improve Quantum Efficiency |
摘要 |
A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.
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申请公布号 |
US2013307104(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213476785 |
申请日期 |
2012.05.21 |
申请人 |
TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;HUNG FENG-CHI;LIN JENG-SHYAN;WANG WEN-DE;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;HUNG FENG-CHI;LIN JENG-SHYAN;WANG WEN-DE |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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