| 摘要 |
This power semiconductor module (101) is provided with: a first frame (1) and a second frame (2) at which a plurality of transistor chips (11) and diode chips (12) are disposed; a first intermediate frame (5) neighboring the first frame; a second intermediate frame (6) neighboring the second frame; a third frame (3) that is electrically connected to the first intermediate frame and that is disposed above the first frame; a fourth frame (4) that is electrically connected to the second intermediate frame and that is disposed above the second frame; a power source terminal (22) provided on an extension of the first frame; a ground terminal (23) provided on an extension of the fourth frame; and an output terminal (24) provided on an extension to which the second frame and third frame are electrically connected. The third frame (3) and fourth frame (4) are disposed parallel to each other, and the power source terminal, ground terminal, and output terminal are disposed in a manner so that the induced voltages arising in the third frame (3) and in the fourth frame (4) are in directions opposite each other. |
