SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

In the present invention, a first layer (121) has a first conductivity type. A second layer (122) is provided on the first layer (121) and has a second conductivity type. A third layer (123) is provided on the second layer (122), is separated from the first layer (121) by means of the second layer (122), and has the first conductivity type. A trench (TR) penetrates the third layer (123) and the second layer (122), reaching the first layer (121). The first layer (121) includes a relaxation region (121R) sandwiching a gate insulating film (201) against a gate electrode (202). At the relaxation region (121R), a first impurity is added that imparts the first conductivity type. Also at the relaxation region (121R), a second impurity that imparts the second conductivity type is added at a concentration lower than the concentration of the first impurity. As a result, an electrical field relaxation structure for increasing voltage resistance is easily formed.