发明名称 REACTIVE DC SPUTTERING APPARATUS AND FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a reactive DC sputtering apparatus and a film deposition method capable of stably deposit a film for a long period of time and forming an excellent thin film by suppressing a damage on a substrate with a simple configuration.SOLUTION: A reactive DC sputtering apparatus 10 includes a target 11, a substrate holding part 12 facing the target 11, a circular anode electrode 13 provided adjacent to the substrate holding part 12 side of the target 11, a pulsed DC power supply 14 connected to the target 11, and a as supply means 16A supplying a deposition space with a mixed gas of inert gas and reactive gas, wherein the anode electrode 13 has a first aperture 19 and a second aperture 20 laminated adjacent to the substrate holding part 12 side of the first aperture 19, and the second aperture 20 has a plurality of through holes 20a penetrating in a thickness direction.
申请公布号 JP2013234380(A) 申请公布日期 2013.11.21
申请号 JP20120128081 申请日期 2012.06.05
申请人 FUJIKURA LTD 发明人 MORITA KATSUHIRO
分类号 C23C14/34 主分类号 C23C14/34
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