发明名称 |
RETROGRADE SUBSTRATE FOR DEEP TRENCH CAPACITORS |
摘要 |
A semiconductor device includes a substrate having a first doped portion to a first depth and a second doped portion below the first depth. A deep trench capacitor is formed in the substrate and extends below the first depth. The deep trench capacitor has a buried plate that includes a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion. |
申请公布号 |
US2013307121(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313936679 |
申请日期 |
2013.07.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BASKER VEERARAGHAVAN S.;HAENSCH WILFRIED E.;LEOBANDUNG EFFENDI;YAMASHITA TENKO;YEH CHUN-CHEN |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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