发明名称 |
PREVENTING SHORTING OF ADJACENT DEVICES |
摘要 |
Embodiments of the present invention provide a method of preventing electrical shorting of adjacent semiconductor devices. The method includes forming a plurality of fins of a plurality of field-effect-transistors on a substrate; forming at least one barrier structure between a first and a second fin of the plurality of fins; and growing an epitaxial film from the plurality of fins, the epitaxial film extending horizontally from sidewalls of at least the first and second fins and reaching the barrier structure situating between the first and second fins.
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申请公布号 |
US2013309837(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213471487 |
申请日期 |
2012.05.15 |
申请人 |
CHANG JOSEPHINE;GUILLORN MICHAEL A.;PRANATHARTHIHARAN BALASUBRAMANIAN;SLEIGHT JEFFREY WILLIAM;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG JOSEPHINE;GUILLORN MICHAEL A.;PRANATHARTHIHARAN BALASUBRAMANIAN;SLEIGHT JEFFREY WILLIAM |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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