发明名称 |
FORMING PATTERNS USING BLOCK COPOLYMERS AND ARTICLES |
摘要 |
<p>A method for patterning a layered structure is provided that includes performing photolithography to provide a developed prepattern layer on a horizontal surface of an underlying substrate, modifying the prepattern layer to form spaced apart inorganic material guides, casting and annealing a layer of a self-assembling block copolymer to form laterally-spaced cylindrical features, forming a pattern by selectively removing at least a portion of one block of the self-assembling block copolymer, and transferring the pattern to the underlying substrate. The method is suitable for making sub-50 nm patterned layered structures.</p> |
申请公布号 |
WO2013173249(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
WO2013US40815 |
申请日期 |
2013.05.13 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. |
发明人 |
RATHSACK, BENJAMEN, M.;SOMERVELL, MARK, H.;GANDHI, MEENAKSHISUNDARAM |
分类号 |
G03F7/00;G03F7/004 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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