ELEMENT FOR CONDUCTIVE FILM, CONDUCTIVE FILM LAMINATED BODY, ELECTRONIC EQUIPMENT, AND METHOD OF MANUFACTURING ELEMENT FOR CONDUCTIVE FILM AND CONDUCTIVE FILM LAMINATED BODY

摘要

Provided is an element for a conductive film having an amorphous layer that can easily be crystallised by heat treatment, in which the sheet resistance when crystallised is low and in which increase of film thickness is suppressed. The element for a conductive film has a transparent substrate and an amorphous layer made of indium oxide deposited on the aforementioned transparent substrate. The amorphous layer is made of indium-tin oxide, containing 5.5 to 9 mass% of tin calculated as the oxide and is of film thickness 15 to 25 nm and sheet resistance 50 to 100Omega/□when crystallised.