<p>Embodiments of the present invention provide a method of preventing electrical shorting of adjacent semiconductor devices. The method includes forming a plurality of fins (101-104) of a plurality of field-effect-transistors on a substrate (109); forming at least one barrier structure (162) between a first (102) and a second (103) fin of the plurality of fins; and growing an epitaxial film (181-188) from the plurality of fins, the epitaxial film extending horizontally from sidewalls of at least the first and second fins and reaching the barrier structure situating between the first and second fins.</p>
申请公布号
WO2013172986(A1)
申请公布日期
2013.11.21
申请号
WO2013US34576
申请日期
2013.03.29
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
CHANG, JOSEPHINE;GUILLORN, MICHAEL, A.;PRANATHARTHIHARAN, BALASUBRAMANIAN;SLEIGHT, JEFFREY, WILLIAM