| 摘要 |
PROBLEM TO BE SOLVED: To improve a writing speed of host data with respect to a nonvolatile memory where there is a difference in writing speeds between a lower level page and an upper level page.SOLUTION: A nonvolatile memory where multi-value storage with 2 bits or more is performed in one memory cell, has a lower level page and an upper level page for at least the multi-value storage as a physical page in which a physical address is set, and where data writing is performed using each physical page in an order of physical addresses. Writing of supplied host data is performed according to a data writing request from a host apparatus, with respect to the nonvolatile memory. Data writing is performed until immediately before the lower level page, such that the data writing according to a next data writing request is started from the lower level page. |
