发明名称 METHOD OF FABRICATING HIGH EFFICIENCY CIGS SOLAR CELLS
摘要 A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.
申请公布号 US2013309850(A1) 申请公布日期 2013.11.21
申请号 US201213595730 申请日期 2012.08.27
申请人 LIANG HAIFAN;LEE SANG;LIU WEI;NIJHAWAN SANDEEP;VAN DUREN JEROEN 发明人 LIANG HAIFAN;LEE SANG;LIU WEI;NIJHAWAN SANDEEP;VAN DUREN JEROEN
分类号 H01L21/203 主分类号 H01L21/203
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