发明名称 |
METHOD OF FABRICATING HIGH EFFICIENCY CIGS SOLAR CELLS |
摘要 |
A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.
|
申请公布号 |
US2013309850(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201213595730 |
申请日期 |
2012.08.27 |
申请人 |
LIANG HAIFAN;LEE SANG;LIU WEI;NIJHAWAN SANDEEP;VAN DUREN JEROEN |
发明人 |
LIANG HAIFAN;LEE SANG;LIU WEI;NIJHAWAN SANDEEP;VAN DUREN JEROEN |
分类号 |
H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|