| 摘要 |
<p>In this semiconductor light emitting element a first conducting-type first cladding layer (312), a quantum well active layer (314), and a second conducting- type second cladding layer (316) are laminated in this order on a semiconductor substrate (300). A wave guide is formed on the second cladding layer (316) by means of ridge shaped stripes. When the width of the ridge stripes on the front end surface from which laser light is emitted is Wf, the width of the ridge stripes on the back end surface opposite the front end surface is Wr, the front end surface reflectivity is Rf, and the back end surface reflectivity is Rr, the relationship therebetween is Rf<Rr and Wf>Wr. The basic transverse mode, the primary high order transverse mode, the secondary high order transverse mode, and the tertiary high order transverse mode are guided through the wave guide.</p> |
