| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing conduction loss without impairing withstand voltage performance and suppressing recovery ringing.SOLUTION: In a cathode layer, carrier density is set to be lower than spatial charge density. Thus, reduction in a resistance value can be suppressed even if the spatial charge density of the cathode layer is increased. Consequently, the resistance value of a cathode layer can be made large even in a semiconductor device in which a drift layer is made thin for suppressing a conduction loss and having a large spatial charge density for suppressing a depletion layer from reaching a hole injection layer. In other words, the conduction loss can be reduced while suppressing recovery ringing, and further reduction in withstand voltage performance can be suppressed. |
