| 摘要 |
Provided are: a CIGS4-based alloy or a CIGSS5-based alloy that are such that it is possible to control the diffusion of Na into a CIGS film or CIGSS film, which is a light-absorbing layer of a solar cell, at a high precision, and that are such that the production of a solar cell is also easy; and a method for producing the CIGS4-based alloy and a CIGSS5-based alloy. The method for producing a CIGS4-based alloy to which Na has been added is provided with: a first step for producing a CIG3-based alloy by vacuum sealing a mixture containing copper, indium, and gallium in an ampoule, and causing crystallization at a high temperature; a second step for producing a CIG3-based alloy powder by pulverizing the CIG3-based alloy; and a third step for producing a CIGS4-based alloy by admixing selenium and sodium selenide to the pulverized CIG3-based alloy, vacuum sealing in an ampoule, and causing crystallization at a high temperature. The CIGSS5-based alloy further includes sulfur, and the sulfur is added in the third step. |
